IR2109SPBF
ActiveTHE IR2109S IS A 600 V HALF-BRIDGE GATE DRIVER IC WITH SHUTDOWN (8 LEAD SOIC PACKAGE)
Deep-Dive with AI
Search across all available documentation for this part.
IR2109SPBF
ActiveTHE IR2109S IS A 600 V HALF-BRIDGE GATE DRIVER IC WITH SHUTDOWN (8 LEAD SOIC PACKAGE)
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IR2109SPBF |
|---|---|
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET, IGBT, MOSFET (N-Channel) |
| High Side Voltage - Max (Bootstrap) [Max] | 600 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH | 0.8 V, 2.9 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 0.154 in |
| Package / Case | 8-SOIC |
| Package / Case | 3.9 mm |
| Rise / Fall Time (Typ) [custom] | 150 ns |
| Rise / Fall Time (Typ) [custom] | 50 ns |
| Supplier Device Package | 8-SOIC |
| Voltage - Supply [Max] | 20 V |
| Voltage - Supply [Min] | 10 VDC |
| Part | Gate Type | Number of Drivers | Supplier Device Package | Input Type | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Logic Voltage - VIL, VIH | High Side Voltage - Max (Bootstrap) [Max] | Package / Case | Package / Case | Package / Case | Voltage - Supply [Max] | Voltage - Supply [Min] | Driven Configuration | Channel Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 2 | 8-SOIC | Non-Inverting | -40 °C | 150 °C | Surface Mount | 0.8 V 2.9 V | 600 V | 0.154 in | 8-SOIC | 3.9 mm | 20 V | 10 VDC | Half-Bridge | Synchronous | 150 ns | 50 ns |
INFINEON | IGBT MOSFET (N-Channel) | 2 | 8-SOIC | Non-Inverting | -40 °C | 150 °C | Surface Mount | 0.8 V 2.9 V | 600 V | 0.154 in | 8-SOIC | 3.9 mm | 20 V | 10 VDC | Half-Bridge | Synchronous | 150 ns | 50 ns |
 INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 2 | 8-PDIP | Non-Inverting | -40 °C | 150 °C | Through Hole | 0.8 V 2.9 V | 600 V | 8-DIP (0.300" 7.62mm) | 20 V | 10 VDC | Half-Bridge | Synchronous | 150 ns | 50 ns | ||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 2 | 8-PDIP | Non-Inverting | -40 °C | 150 °C | Through Hole | 0.8 V 2.9 V | 600 V | 8-DIP (0.300" 7.62mm) | 20 V | 10 VDC | Half-Bridge | Synchronous | 150 ns | 50 ns | ||
INFINEON | ||||||||||||||||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 2 | 8-SOIC | Non-Inverting | -40 °C | 150 °C | Surface Mount | 0.8 V 2.9 V | 600 V | 0.154 in | 8-SOIC | 3.9 mm | 20 V | 10 VDC | Half-Bridge | Synchronous | 150 ns | 50 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IR2109 Series
EiceDRIVER™ 600 V half bridgegate driver ICwith typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package forIGBTsandMOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP. For the new version with ourSOI technologywe recommend2ED2109S06F, providing integrated bootstrap diode, better robustness and higher switching frequency
Documents
Technical documentation and resources