IR2109 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HALF-BRIDGE 8SOIC

Part	Gate Type	Number of Drivers	Supplier Device Package	Input Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Logic Voltage - VIL, VIH	High Side Voltage - Max (Bootstrap) [Max]	Package / Case	Package / Case	Package / Case	Voltage - Supply [Max]	Voltage - Supply [Min]	Driven Configuration	Channel Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]
INFINEON IR2109STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	2	8-SOIC	Non-Inverting	-40 °C	150 °C	Surface Mount	0.8 V 2.9 V	600 V	0.154 in	8-SOIC	3.9 mm	20 V	10 VDC	Half-Bridge	Synchronous	150 ns	50 ns
INFINEON IR2109SPBF	IGBT MOSFET (N-Channel)	2	8-SOIC	Non-Inverting	-40 °C	150 °C	Surface Mount	0.8 V 2.9 V	600 V	0.154 in	8-SOIC	3.9 mm	20 V	10 VDC	Half-Bridge	Synchronous	150 ns	50 ns
INFINEON IR2109	IGBT MOSFET (N-Channel) N-Channel MOSFET	2	8-PDIP	Non-Inverting	-40 °C	150 °C	Through Hole	0.8 V 2.9 V	600 V		8-DIP (0.300" 7.62mm)		20 V	10 VDC	Half-Bridge	Synchronous	150 ns	50 ns
INFINEON IR2109PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	2	8-PDIP	Non-Inverting	-40 °C	150 °C	Through Hole	0.8 V 2.9 V	600 V		8-DIP (0.300" 7.62mm)		20 V	10 VDC	Half-Bridge	Synchronous	150 ns	50 ns
INFINEON IR2109PBF
INFINEON IR2109SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	2	8-SOIC	Non-Inverting	-40 °C	150 °C	Surface Mount	0.8 V 2.9 V	600 V	0.154 in	8-SOIC	3.9 mm	20 V	10 VDC	Half-Bridge	Synchronous	150 ns	50 ns