Integrated Circuits (ICs)

IR2109PBF

NRND

EICEDRIVER™ 600 V HALF BRIDGE DRIVER IC WITH TYPICAL 0.2 A SOURCE AND 0.35 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT PDIP8 PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: ENABLE, SHOOT THROUGH PROTECTION, SHUTDOWN, SINGLE INPUT

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Integrated Circuits (ICs)

IR2109PBF

NRND

INFINEON

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2109PBF

Channel Type	Synchronous
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	0.8 V, 2.9 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-DIP (0.300", 7.62mm)
Rise / Fall Time (Typ) [custom]	150 ns
Rise / Fall Time (Typ) [custom]	50 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2109 Series

Part	Gate Type	Number of Drivers	Supplier Device Package	Input Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Logic Voltage - VIL, VIH	High Side Voltage - Max (Bootstrap) [Max]	Package / Case	Package / Case	Package / Case	Voltage - Supply [Max]	Voltage - Supply [Min]	Driven Configuration	Channel Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]
INFINEON IR2109STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	2	8-SOIC	Non-Inverting	-40 °C	150 °C	Surface Mount	0.8 V 2.9 V	600 V	0.154 in	8-SOIC	3.9 mm	20 V	10 VDC	Half-Bridge	Synchronous	150 ns	50 ns
INFINEON IR2109SPBF	IGBT MOSFET (N-Channel)	2	8-SOIC	Non-Inverting	-40 °C	150 °C	Surface Mount	0.8 V 2.9 V	600 V	0.154 in	8-SOIC	3.9 mm	20 V	10 VDC	Half-Bridge	Synchronous	150 ns	50 ns
INFINEON IR2109	IGBT MOSFET (N-Channel) N-Channel MOSFET	2	8-PDIP	Non-Inverting	-40 °C	150 °C	Through Hole	0.8 V 2.9 V	600 V		8-DIP (0.300" 7.62mm)		20 V	10 VDC	Half-Bridge	Synchronous	150 ns	50 ns
INFINEON IR2109PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	2	8-PDIP	Non-Inverting	-40 °C	150 °C	Through Hole	0.8 V 2.9 V	600 V		8-DIP (0.300" 7.62mm)		20 V	10 VDC	Half-Bridge	Synchronous	150 ns	50 ns
INFINEON IR2109PBF
INFINEON IR2109SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	2	8-SOIC	Non-Inverting	-40 °C	150 °C	Surface Mount	0.8 V 2.9 V	600 V	0.154 in	8-SOIC	3.9 mm	20 V	10 VDC	Half-Bridge	Synchronous	150 ns	50 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	373	$ 3.32
		373	$ 3.32
		1683	$ 2.14
		1683	$ 2.14
	Tube	1	$ 3.48
		1	$ 3.48
		10	$ 3.12
		10	$ 3.12
		50	$ 2.95
		50	$ 2.95
		100	$ 2.56
		100	$ 2.56
		250	$ 2.43
		250	$ 2.43
		500	$ 2.18
		500	$ 2.18
		1000	$ 1.84
		1000	$ 1.84
		2500	$ 1.74
		2500	$ 1.74
		5000	$ 1.68
		5000	$ 1.68
Mouser	N/A	1	$ 3.32
		10	$ 2.36
		25	$ 2.03
		100	$ 1.97
		250	$ 1.90
		500	$ 1.85
		1000	$ 1.79
		3000	$ 1.74

Description

General part information

IR2109 Series

600 V Half Bridge Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC, 14 Lead SOIC, and 14 Lead PDIP. For the new version with ourSOI technologywe recommend2ED2109S06F, providing integrated bootstrap diode, better robustness and higher switching frequency

Documents

Technical documentation and resources