Discrete Semiconductor Products
STGB19NC60HDT4
ActiveSTMicroelectronics
IGBT, 40 A, 2 V, 130 W, 600 V, TO-263 (D2PAK), 3 PINS
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Discrete Semiconductor Products
STGB19NC60HDT4
ActiveSTMicroelectronics
IGBT, 40 A, 2 V, 130 W, 600 V, TO-263 (D2PAK), 3 PINS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STGB19NC60HDT4 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 40 A |
| Current - Collector Pulsed (Icm) | 60 A |
| Gate Charge | 53 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power - Max [Max] | 130 W |
| Reverse Recovery Time (trr) | 31 ns |
| Supplier Device Package | D2PAK |
| Switching Energy | 189 µJ, 85 µJ |
| Td (on/off) @ 25°C [Max] | 97 ns |
| Td (on/off) @ 25°C [Min] | 25 ns |
| Test Condition | 390 V, 15 V, 10 Ohm, 12 A |
| Vce(on) (Max) @ Vge, Ic | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 994 | $ 3.58 | |
Description
General part information
STGB19NC60HDT4 Series
These devices are ultrafast IGBT. They utilize the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.