19 A, 600 V, very fast IGBT with Ultrafast diode
19 A, 600 V, very fast IGBT with Ultrafast diode
19 A, 600 V, very fast IGBT with Ultrafast diode
| Part | Reverse Recovery Time (trr) | Test Condition | Package / Case | Vce(on) (Max) @ Vge, Ic | Gate Charge | Td (on/off) @ 25°C [Max] | Td (on/off) @ 25°C [Min] | Mounting Type | Switching Energy | Supplier Device Package | Power - Max [Max] | Current - Collector (Ic) (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Current - Collector Pulsed (Icm) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 31 ns | 10 Ohm 12 A 15 V 390 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 2.5 V | 53 nC | 97 ns | 25 ns | Surface Mount | 85 µJ 189 µJ | D2PAK | 130 W | 40 A | 600 V | 150 °C | -55 °C | 60 A |