Specification	CSD75208W1015

Configuration	2 P-Channel (Dual) Common Source
Current - Continuous Drain (Id) @ 25°C	1.6 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds [Max]	410 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	DSBGA, 6-UFBGA
Power - Max [Max]	750 mW
Rds On (Max) @ Id, Vgs	68 mOhm
Supplier Device Package	6-DSBGA (1x1.5)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.1 V

CSD75208W1015 Series

-20-V, P channel NexFET™ power MOSFET, dual Common Source WLP 1 mm x 1.5 mm, 108 mOhm, gate ESD prot

Part	Package / Case	Power - Max [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Configuration	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Feature	Operating Temperature [Min]	Operating Temperature [Max]
Texas Instruments CSD75208W1015T	6-UFBGA DSBGA	750 mW	20 V	Surface Mount	6-DSBGA (1x1.5)	1.1 V	MOSFET (Metal Oxide)	1.6 A	2 P-Channel (Dual) Common Source	68 mOhm	410 pF	Logic Level Gate	-55 °C	150 °C
Texas Instruments CSD75208W1015	6-UFBGA DSBGA	750 mW	20 V	Surface Mount	6-DSBGA (1x1.5)	1.1 V	MOSFET (Metal Oxide)	1.6 A	2 P-Channel (Dual) Common Source	68 mOhm	410 pF	Logic Level Gate	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.54
		10	$ 0.46
		100	$ 0.32
		500	$ 0.25
		1000	$ 0.20
	Digi-Reel®	1	$ 0.54
		10	$ 0.46
		100	$ 0.32
		500	$ 0.25
		1000	$ 0.20
	Tape & Reel (TR)	3000	$ 0.18
		6000	$ 0.17
		9000	$ 0.16
		30000	$ 0.16
Texas Instruments	LARGE T&R	1	$ 0.32
		100	$ 0.21
		250	$ 0.17
		1000	$ 0.11

Description

General part information

CSD75208W1015 Series

This device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.