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YZC-6-BGA Pkg
Discrete Semiconductor Products

CSD75208W1015T

Active
Texas Instruments

-20-V, P CHANNEL NEXFET™ POWER MOSFET, DUAL COMMON SOURCE WLP 1 MM X 1.5 MM, 108 MOHM, GATE ESD PROT

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YZC-6-BGA Pkg
Discrete Semiconductor Products

CSD75208W1015T

Active
Texas Instruments

-20-V, P CHANNEL NEXFET™ POWER MOSFET, DUAL COMMON SOURCE WLP 1 MM X 1.5 MM, 108 MOHM, GATE ESD PROT

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD75208W1015T
Configuration2 P-Channel (Dual) Common Source
Current - Continuous Drain (Id) @ 25°C1.6 A
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Input Capacitance (Ciss) (Max) @ Vds [Max]410 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseDSBGA, 6-UFBGA
Power - Max [Max]750 mW
Rds On (Max) @ Id, Vgs68 mOhm
Supplier Device Package6-DSBGA (1x1.5)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.11
10$ 0.91
100$ 0.71
Digi-Reel® 1$ 1.11
10$ 0.91
100$ 0.71
Tape & Reel (TR) 250$ 0.70
500$ 0.60
1250$ 0.49
2500$ 0.46
6250$ 0.44
12500$ 0.42
Texas InstrumentsSMALL T&R 1$ 0.96
100$ 0.65
250$ 0.50
1000$ 0.33

Description

General part information

CSD75208W1015 Series

This device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

This device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.