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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N4240 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 30 |
| Mounting Type | Through Hole |
| Package / Case | TO-66-2, TO-213AA |
| Power - Max [Max] | 35 W |
| Supplier Device Package | TO-66 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 500 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 39.02 | |
| Microchip Direct | N/A | 1 | $ 42.02 | |
| Newark | Each | 100 | $ 39.02 | |
| 500 | $ 37.51 | |||
Description
General part information
2N4240-Transistor Series
This 2N4240 power NPN transistor is produced in a PLANAR process available in a TO-66 package. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200°C permits reliable operation in high ambientes, and the hermetically sealed package insures maximum reliability and long life.
Documents
Technical documentation and resources