2N4240-Transistor Series

Catalog

POWER BJT TO-66 ROHS COMPLIANT: YES

Part	Supplier Device Package	Package / Case	Power - Max [Max]	Mounting Type	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]
Microchip Technology 2N4240	TO-66	TO-213AA TO-66-2	35 W	Through Hole	NPN	30	1 V	500 V	2 A

Catalog

Key Features

- Off-Line Inverters

- Deflection Circuits

- Switching Regulators

- DC-DC Converters

- Motor Controls

- High Voltage Amplifiers

- High Voltage: 250 to 500V

- High Current: 2 Amps

- Fast Switching: tf < 3msec

- Low VCE (SAT)

- High Power: 35 Watts.

Description

This 2N4240 power NPN transistor is produced in a PLANAR process available in a TO-66 package. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200°C permits reliable operation in high ambientes, and the hermetically sealed package insures maximum reliability and long life.