MBR360RLG
ActiveRECTIFIER DIODE, SINGLE, 60 V, 3 A, DO-201AD, 2, 740 MV ROHS COMPLIANT: YES
Deep-Dive with AI
Search across all available documentation for this part.
MBR360RLG
ActiveRECTIFIER DIODE, SINGLE, 60 V, 3 A, DO-201AD, 2, 740 MV ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MBR360RLG |
|---|---|
| Current - Average Rectified (Io) | 3 A |
| Current - Reverse Leakage @ Vr | 600 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | Axial, DO-27, DO-201AA |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | Axial |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 60 V |
| Voltage - Forward (Vf) (Max) @ If | 740 mV |
MBR360 Series
Schottky Barrier Rectifier, 60 V, 3.0 A
| Part | Supplier Device Package | Technology | Mounting Type | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Package / Case | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | Axial | Schottky | Through Hole | 150 °C | -65 C | 200 mA 500 ns | 60 V | 3 A | Axial DO-201AA DO-27 | 600 µA | 740 mV |
ON Semiconductor | Axial | Schottky | Through Hole | 150 °C | -65 C | 200 mA 500 ns | 60 V | 3 A | Axial DO-201AA DO-27 | 600 µA | 740 mV |
ON Semiconductor | Axial | Schottky | Through Hole | 150 °C | -65 C | 200 mA 500 ns | 60 V | 3 A | Axial DO-201AA DO-27 | 600 µA | 740 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.81 | |
| 10 | $ 0.50 | |||
| 100 | $ 0.32 | |||
| 500 | $ 0.25 | |||
| Tape & Reel (TR) | 1500 | $ 0.21 | ||
| 3000 | $ 0.19 | |||
| 4500 | $ 0.18 | |||
| 7500 | $ 0.17 | |||
| 10500 | $ 0.16 | |||
| 15000 | $ 0.16 | |||
| 37500 | $ 0.15 | |||
| Newark | Each | 1 | $ 0.70 | |
| 10 | $ 0.51 | |||
| 100 | $ 0.42 | |||
| 500 | $ 0.34 | |||
| 1000 | $ 0.28 | |||
| 3000 | $ 0.27 | |||
| 10500 | $ 0.26 | |||
| ON Semiconductor | N/A | 1 | $ 0.16 | |
Description
General part information
MBR360 Series
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.