Specification	MBR360

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	600 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Axial, DO-27, DO-201AA
Speed	200 mA, 500 ns
Supplier Device Package	Axial
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	740 mV

MBR360 Series

Schottky Barrier Rectifier, 60 V, 3.0 A

Part	Supplier Device Package	Technology	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Package / Case	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If
ON Semiconductor MBR360G	Axial	Schottky	Through Hole	150 °C	-65 C	200 mA 500 ns	60 V	3 A	Axial DO-201AA DO-27	600 µA	740 mV
ON Semiconductor MBR360RLG	Axial	Schottky	Through Hole	150 °C	-65 C	200 mA 500 ns	60 V	3 A	Axial DO-201AA DO-27	600 µA	740 mV
ON Semiconductor MBR360	Axial	Schottky	Through Hole	150 °C	-65 C	200 mA 500 ns	60 V	3 A	Axial DO-201AA DO-27	600 µA	740 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MBR360 Series

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.