MBR360 Series

Schottky Barrier Rectifier, 60 V, 3.0 A

Catalog

Schottky Barrier Rectifier, 60 V, 3.0 A

Part	Supplier Device Package	Technology	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Package / Case	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If
ON Semiconductor MBR360G	Axial	Schottky	Through Hole	150 °C	-65 C	200 mA 500 ns	60 V	3 A	Axial DO-201AA DO-27	600 µA	740 mV
ON Semiconductor MBR360RLG	Axial	Schottky	Through Hole	150 °C	-65 C	200 mA 500 ns	60 V	3 A	Axial DO-201AA DO-27	600 µA	740 mV
ON Semiconductor MBR360	Axial	Schottky	Through Hole	150 °C	-65 C	200 mA 500 ns	60 V	3 A	Axial DO-201AA DO-27	600 µA	740 mV

Catalog

Schottky Barrier Rectifier, 60 V, 3.0 A

Key Features

• Extremely Low vF

• Low Power Loss/High Efficiency

• Highly Stable Oxide Passivated Junction

• Low Stored Charge, Majority Carrier ConductionMechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 1.1 gram (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

• Shipped in plastic bags, 5,000 per bag

• Available Tape and Reeled, 1500 per reel, by adding a "RL'' suffix to the part number

• Polarity: Cathode indicated by Polarity Band

• Marking: B350, B360

• Pb-Free Packages are Available*

Description

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.