Discrete Semiconductor Products

RGWX5TS65GC13

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HIGH-SPEED FAST SWITCHING TYPE, 650V 75A, TO-247N, FIELD STOP TRENCH IGBT

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Search across all available documentation for this part.

DocumentsMethod for Calculating Junction Temperature from Transient Thermal Resistance Data Generation Mechanism of Voltage Surge on Commutation Side (Basic)+38

Discrete Semiconductor Products

RGWX5TS65GC13

Active

Rohm Semiconductor

HIGH-SPEED FAST SWITCHING TYPE, 650V 75A, TO-247N, FIELD STOP TRENCH IGBT

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DocumentsMethod for Calculating Junction Temperature from Transient Thermal Resistance Data Generation Mechanism of Voltage Surge on Commutation Side (Basic)+38

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RGWX5TS65GC13

Current - Collector (Ic) (Max) [Max]	132 A
Current - Collector Pulsed (Icm)	300 A
Gate Charge	213 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	348 W
Supplier Device Package	TO-247GE
Switching Energy	1.68 mJ, 2.39 mJ
Td (on/off) @ 25°C	64 ns, 229 ns
Test Condition	10 Ohm, 400 V, 75 A, 15 V
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

RGWX5TS65 Series

High-Speed Fast Switching Type, 650V 75A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive

Part	IGBT Type	Package / Case	Vce(on) (Max) @ Vge, Ic	Test Condition	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Mounting Type	Current - Collector Pulsed (Icm)	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Gate Charge	Operating Temperature [Max]	Operating Temperature [Min]	Td (on/off) @ 25°C	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Switching Energy	Reverse Recovery Time (trr)	Td (on/off) @ 25°C
Rohm Semiconductor RGWX5TS65GC11	Trench Field Stop	TO-247-3	1.9 V	10 Ohm 15 V 75 A 400 V	132 A	TO-247N	Through Hole	300 A	348 W	650 V	213 nC	175 °C	-40 °C	64 ns 229 ns
Rohm Semiconductor RGWX5TS65EHRC11	Trench Field Stop	TO-247-3	1.9 V	10 Ohm 15 V 37.5 A 400 V	132 A	TO-247N	Through Hole	300 A	348 W	650 V	213 nC	175 °C	-40 °C		243 ns	59 ns
Rohm Semiconductor RGWX5TS65GC13	Trench Field Stop	TO-247-3	1.9 V	10 Ohm 15 V 75 A 400 V	132 A	TO-247GE	Through Hole	300 A	348 W	650 V	213 nC	175 °C	-40 °C	64 ns 229 ns			1.68 mJ 2.39 mJ
Rohm Semiconductor RGWX5TS65DGC11	Trench Field Stop	TO-247-3	1.9 V	10 Ohm 15 V 75 A 400 V	132 A	TO-247N	Through Hole	300 A	348 W	650 V	213 nC	175 °C	-40 °C	64 ns 229 ns			1.68 mJ 2.39 mJ	101 ns
Rohm Semiconductor RGWX5TS65HRC11	Trench Field Stop	TO-247-3	1.9 V	10 Ohm 15 V 37.5 A 400 V	132 A	TO-247N	Through Hole	300 A	348 W	650 V	213 nC	175 °C	-40 °C						62 ns 237 ns
Rohm Semiconductor RGWX5TS65DHRC11	Trench Field Stop	TO-247-3	1.9 V	10 Ohm 15 V 37.5 A 400 V	132 A	TO-247N	Through Hole	300 A	348 W	650 V	213 nC	175 °C	-40 °C					92 ns	62 ns 237 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	600	$ 7.72
	Tube	1	$ 6.29
		10	$ 5.68
		25	$ 5.41
		120	$ 4.70
		360	$ 4.49
		600	$ 4.09
		1080	$ 3.57
		2520	$ 3.43
Newark	Each	1	$ 6.53
		10	$ 5.60
		25	$ 5.08
		50	$ 4.87
		100	$ 4.66
		250	$ 4.39

Description

General part information

RGWX5TS65 Series

RGWX5TS65DHR is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chargers, DC-DC Converters, PFC, Industrial Inverter. This product complies AEC-Q101 qualification. The RGW series features high-speed switching, contributing to higher efficiency of applications.

Documents

Technical documentation and resources

RGWX5TS65GC13

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RGWX5TS65GC13

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Technical Specifications

RGWX5TS65 Series

Pricing

Description

RGWX5TS65 Series

Documents

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Precautions for Thermal Resistance of Insulation Sheet

How to Create Symbols for PSpice Models

Package Dimensions - TO-247GE

Two-Resistor Model for Thermal Simulation

What is a Thermal Model? (IGBT)

About Flammability of Materials

Judgment Criteria of Thermal Evaluation

PCB Layout Thermal Design Guide

Types and Features of Transistors

Notes for Temperature Measurement Using Thermocouples

Compliance of the ELV directive

Moisture Sensitivity Level

Measurement Method and Usage of Thermal Resistance RthJC

How to Use LTspice&reg; Models

Impedance Characteristics of Bypass Capacitor

How to Use LTspice&reg; Models: Tips for Improving Convergence

4 Steps for Successful Thermal Designing of Power Devices

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Calculation of Power Dissipation in Switching Circuit

Anti-Whisker formation

Semikron Danfoss: Partnering for the Safe Supply of Industrial Power Modules

About Export Administration Regulations (EAR)

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Importance of Probe Calibration When Measuring Power: Deskew

Notes for Calculating Power Consumption:Static Operation

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Method for Monitoring Switching Waveform

Part Explanation

θ<sub>JA</sub> and Ψ<sub>JT</sub>

What Is Thermal Design

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

Precautions When Measuring the Rear of the Package with a Thermocouple

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Estimation of switching losses in IGBTs operating with resistive load

RGWX5TS65 Data Sheet

Basics of Thermal Resistance and Heat Dissipation

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

RGWX5TS65 Series

How to Use LTspice® Models

How to Use LTspice® Models: Tips for Improving Convergence