Discrete Semiconductor Products

RGWX5TS65GC11

NRND

Rohm Semiconductor

INSULATED GATE BIPOLAR TRANSISTOR, 132A I(C), 650V V(BR)CES, N-CHANNEL, TO-247, TO-247N, 3 PIN

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Discrete Semiconductor Products

RGWX5TS65GC11

NRND

Rohm Semiconductor

INSULATED GATE BIPOLAR TRANSISTOR, 132A I(C), 650V V(BR)CES, N-CHANNEL, TO-247, TO-247N, 3 PIN

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RGWX5TS65GC11

Current - Collector (Ic) (Max)	132 A
Current - Collector Pulsed (Icm)	300 A
Gate Charge	213 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Supplier Device Package	TO-247N
Td (on/off) @ 25°C	229 ns, 64 ns
Test Condition	75 A, 15 V, 10 Ohm, 400 V
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max)	650 V

RGWX5TS65EHR Series

High-Speed Fast Switching Type, 650V 75A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive

Part	Supplier Device Package	Package / Case	Test Condition	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max)	IGBT Type	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Gate Charge	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Switching Energy	Reverse Recovery Time (trr)	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]
Rohm Semiconductor RGWX5TS65GC11	TO-247N	TO-247-3	10 Ohm 15 V 75 A 400 V	64 ns 229 ns	300 A	-40 C	175 °C	132 A	Trench Field Stop	Through Hole	650 V	213 nC	1.9 V
Rohm Semiconductor RGWX5TS65EHRC11	TO-247N	TO-247-3	10 Ohm 15 V 37.5 A 400 V	59 ns	300 A	-40 C	175 °C	132 A	Trench Field Stop	Through Hole	650 V	213 nC	1.9 V	243 ns
Rohm Semiconductor RGWX5TS65GC13	TO-247GE	TO-247-3	10 Ohm 15 V 75 A 400 V	64 ns 229 ns	300 A	-40 C	175 °C	132 A	Trench Field Stop	Through Hole	650 V	213 nC	1.9 V		1.68 mJ 2.39 mJ
Rohm Semiconductor RGWX5TS65DGC11	TO-247N	TO-247-3	10 Ohm 15 V 75 A 400 V	64 ns 229 ns	300 A	-40 C	175 °C	132 A	Trench Field Stop	Through Hole	650 V	213 nC	1.9 V		1.68 mJ 2.39 mJ	101 ns
Rohm Semiconductor RGWX5TS65DHRC11	TO-247N	TO-247-3	10 Ohm 15 V 37.5 A 400 V		300 A	-40 C	175 °C	132 A	Trench Field Stop	Through Hole	650 V	213 nC	1.9 V			92 ns	237 ns	62 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 4.15
		30	$ 2.29
		120	$ 1.88

Description

General part information

RGWX5TS65EHR Series

RGWX5TS65EHR is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chargers, DC-DC Converters, PFC, Industrial Inverter. This product complies AEC-Q101 qualification. The RGW series features high-speed switching, contributing to higher efficiency of applications.

Documents

Technical documentation and resources

No documents available