MSCSM120X10CTYZBNMG

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1200V, HPD, 3 PHASE BRIDGE + ACTUATION FULL-OPTIONS HYBRID POWER DRIVE MSIC™ MOSFET MODULE

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Discrete Semiconductor Products

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1200V, HPD, 3 PHASE BRIDGE + ACTUATION FULL-OPTIONS HYBRID POWER DRIVE MSIC™ MOSFET MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	MSCSM120X10CTYZBNMG

Configuration	6 N-Channel (3-Phase Bridge)
Current - Continuous Drain (Id) @ 25°C	49 A, 28 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs	137 nC, 64 nC
Input Capacitance (Ciss) (Max) @ Vds	838 pF, 1990 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	Module
Power - Max	196 W, 116 W
Rds On (Max) @ Id, Vgs	50 mOhm, 100 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	2.7 V, 2.8 V

1200V, HPD, 3 Phase Bridge + Actuation Full-Options Hybrid Power Drive mSiC™ MOSFET Module

Part	Power - Max	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Technology	Configuration	Current - Continuous Drain (Id) @ 25°C
Microchip Technology MSCSM120X10CTYZBNMG	116 W 196 W	50 mOhm 100 mOhm	64 nC 137 nC	838 pF 1990 pF	2.7 V 2.8 V	Chassis Mount	-55 °C	175 ░C	Module	1200 V	1.2 kV	Silicon Carbide (SiC)	6 N-Channel (3-Phase Bridge)	28 A 49 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

• Configuration: 3-phase bridge + Solenoid Switch + Soft Start Switch + Regen (Brake)

• SiC Power MOSFET

- Low RDS(on)

Technical documentation and resources