MSCSM120X10CTYZBNMG-Module Series

1200V, HPD, 3 Phase Bridge + Actuation Full-Options Hybrid Power Drive mSiC™ MOSFET Module

Catalog

1200V, HPD, 3 Phase Bridge + Actuation Full-Options Hybrid Power Drive mSiC™ MOSFET Module

Part	Power - Max	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Technology	Configuration	Current - Continuous Drain (Id) @ 25°C
Microchip Technology MSCSM120X10CTYZBNMG	116 W 196 W	50 mOhm 100 mOhm	64 nC 137 nC	838 pF 1990 pF	2.7 V 2.8 V	Chassis Mount	-55 °C	175 ░C	Module	1200 V	1.2 kV	Silicon Carbide (SiC)	6 N-Channel (3-Phase Bridge)	28 A 49 A

Catalog

1200V, HPD, 3 Phase Bridge + Actuation Full-Options Hybrid Power Drive mSiC™ MOSFET Module

Key Features

- • Configuration: 3 phase bridge

- • VDSS (V): 1200

- • RDSon (mR) typ: 80

- • Current (A) Tc=80C: 22

- • Silicon type: SiC MOSFET

- • Package type: HPD

Description

• Configuration: 3-phase bridge + Solenoid Switch + Soft Start Switch + Regen (Brake) • SiC Power MOSFET - Low RDS(on) - High-temperature performance • Kelvin source for easy drive • Low stray inductance • Internal thermistor for temperature monitoring (optional) • High-efficiency converter • Outstanding performance at high-frequency operation • Stable temperature behavior • Direct mounting to the heatsink (isolated package) • Low junction to case thermal resistance • RoHS Compliant