Discrete Semiconductor Products

GBU4D

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BRIDGE RECT 1PHASE 200V 4A GBU

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Discrete Semiconductor Products

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BRIDGE RECT 1PHASE 200V 4A GBU

Technical Specifications

Parameters and characteristics for this part

Specification	GBU4D

Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	5 ÁA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-SIP, GBU
Supplier Device Package	GBU
Technology	Standard
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V
Voltage - Peak Reverse (Max)	200 V

Part	Mounting Type	Diode Type	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Current - Average Rectified (Io)	Supplier Device Package	Package / Case	Voltage - Peak Reverse (Max) [Max]	Voltage - Peak Reverse (Max)
GeneSiC Semiconductor GBU4G	Through Hole	Single Phase	5 µA	1.1 V	150 °C	-55 °C	Standard	4 A	GBU	4-SIP GBU	400 V
GeneSiC Semiconductor GBU4D	Through Hole	Single Phase	5 ÁA	1.1 V	150 °C	-55 °C	Standard	4 A	GBU	4-SIP GBU		200 V
GeneSiC Semiconductor GBU4B	Through Hole	Single Phase	5 µA	1.1 V	150 °C	-55 °C	Standard	4 A	GBU	4-SIP GBU	100 V
GeneSiC Semiconductor GBU4M	Through Hole	Single Phase	5 µA	1.1 V	150 °C	-55 °C	Standard	4 A	GBU	4-SIP GBU	1 kV
GeneSiC Semiconductor GBU4J	Through Hole	Single Phase	5 µA	1.1 V	150 °C	-55 °C	Standard	4 A	GBU	4-SIP GBU	600 V
GeneSiC Semiconductor GBU4A	Through Hole	Single Phase	5 µA	1.1 V	150 °C	-55 °C	Standard	4 A	GBU	4-SIP GBU	50 V
GeneSiC Semiconductor GBU4K	Through Hole	Single Phase	5 µA	1.1 V	150 °C	-55 °C	Standard	4 A	GBU	4-SIP GBU		800 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 200 V Through Hole GBU

Technical documentation and resources