Discrete Semiconductor Products

GBU4G

Active

BRIDGE RECT 1PHASE 400V 4A GBU

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

BRIDGE RECT 1PHASE 400V 4A GBU

Technical Specifications

Parameters and characteristics for this part

Specification	GBU4G

Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-SIP, GBU
Supplier Device Package	GBU
Technology	Standard
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V
Voltage - Peak Reverse (Max) [Max]	400 V

Part	Mounting Type	Diode Type	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Current - Average Rectified (Io)	Supplier Device Package	Package / Case	Voltage - Peak Reverse (Max) [Max]	Voltage - Peak Reverse (Max)
GeneSiC Semiconductor GBU4G	Through Hole	Single Phase	5 µA	1.1 V	150 °C	-55 °C	Standard	4 A	GBU	4-SIP GBU	400 V
GeneSiC Semiconductor GBU4D	Through Hole	Single Phase	5 ÁA	1.1 V	150 °C	-55 °C	Standard	4 A	GBU	4-SIP GBU		200 V
GeneSiC Semiconductor GBU4B	Through Hole	Single Phase	5 µA	1.1 V	150 °C	-55 °C	Standard	4 A	GBU	4-SIP GBU	100 V
GeneSiC Semiconductor GBU4M	Through Hole	Single Phase	5 µA	1.1 V	150 °C	-55 °C	Standard	4 A	GBU	4-SIP GBU	1 kV
GeneSiC Semiconductor GBU4J	Through Hole	Single Phase	5 µA	1.1 V	150 °C	-55 °C	Standard	4 A	GBU	4-SIP GBU	600 V
GeneSiC Semiconductor GBU4A	Through Hole	Single Phase	5 µA	1.1 V	150 °C	-55 °C	Standard	4 A	GBU	4-SIP GBU	50 V
GeneSiC Semiconductor GBU4K	Through Hole	Single Phase	5 µA	1.1 V	150 °C	-55 °C	Standard	4 A	GBU	4-SIP GBU		800 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 400 V Through Hole GBU

Technical documentation and resources