Discrete Semiconductor Products

BSC014N04LSIATMA1

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INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 1.45 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE

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Discrete Semiconductor Products

BSC014N04LSIATMA1

Active

INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 1.45 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSC014N04LSIATMA1

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	55 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	96 W, 2.5 W
Rds On (Max) @ Id, Vgs	1.45 mOhm
Supplier Device Package	PG-TDSON-8 FL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

BSC014 Series

Part	Supplier Device Package	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON BSC014N06LS5ATMA1	PG-TDSON-8-7	MOSFET (Metal Oxide)	Surface Mount	60 V	8-PowerTDFN
INFINEON BSC014NE2LSIATMA1	PG-TDSON-8-7	MOSFET (Metal Oxide)	Surface Mount	25 V	8-PowerTDFN	2700 pF	1.4 mOhm	20 V	2 V	N-Channel	2.5 W	74 W	33 A 100 A	150 °C	-55 °C	4.5 V 10 V	39 nC
INFINEON BSC014N04LSATMA1	SuperSO8	MOSFET (Metal Oxide)	Surface Mount	40 V	8-PowerTDFN	4300 pF	1.4 mOhm	20 V	2 V	N-Channel			32 A 100 A	175 °C	-55 °C	4.5 V 10 V	61 nC	2.5 W 96 W
INFINEON BSC014N04LSIATMA1	PG-TDSON-8 FL	MOSFET (Metal Oxide)	Surface Mount	40 V	8-PowerTDFN		1.45 mOhm	20 V	2 V	N-Channel				150 °C	-55 °C	4.5 V 10 V		2.5 W 96 W	4000 pF	55 nC
INFINEON BSC014N06NSSCATMA1	PG-WSON-8-2	MOSFET (Metal Oxide)	Surface Mount	60 V	8-PowerWDFN	8125 pF	1.4 mOhm	20 V	3.3 V	N-Channel			261 A	175 °C	-55 °C	6 V 10 V	104 nC	3 W 188 W
INFINEON BSC014N06NSATMA1	PG-TDSON-8-17	MOSFET (Metal Oxide)	Surface Mount	60 V	8-PowerTDFN		1.45 mOhm	20 V	2.8 V	N-Channel			30 A 100 A	175 °C	-55 °C	6 V 10 V	89 nC	2.5 W 156 W	6500 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.52
		10	$ 1.65
		100	$ 1.16
	Digi-Reel®	1	$ 2.52
		10	$ 1.65
		100	$ 1.16
	N/A	25984	$ 2.22
	Tape & Reel (TR)	5000	$ 1.16
Newark	Each (Supplied on Cut Tape)	1	$ 3.29
		10	$ 2.58
		25	$ 2.36
		50	$ 2.16

Description

General part information

BSC014 Series

New 40V and 60V product families, feature not only the industry’s lowest RDS(on)but also a perfect switching behavior for fast switching applications. 15% lower RDS(on)and 31% lower figure of merit (RDS(on)x Qg) compared to alternative devices has been realized by advanced thin wafer technology.

Documents

Technical documentation and resources