
Discrete Semiconductor Products
BSC014N04LSATMA1
ActiveINFINEON
OPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 1.4 MOHM;
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Discrete Semiconductor Products
BSC014N04LSATMA1
ActiveINFINEON
OPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 1.4 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BSC014N04LSATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 32 A, 100 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 96 W, 2.5 W |
| Rds On (Max) @ Id, Vgs | 1.4 mOhm |
| Supplier Device Package | SuperSO8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSC014 Series
Infineon's 40V and 60V product families feature not only the industry’s lowest RDS(on)but also a perfect switching behavior for fast switching applications. 15% lower RDS(on)and 31% lower figure of merit (RDS(on)x Qg) compared to alternative devices has been realized by advanced thin wafer technology.
Documents
Technical documentation and resources