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8-Power TDFN
Discrete Semiconductor Products

BSC014N04LSATMA1

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INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 1.4 MOHM;

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8-Power TDFN
Discrete Semiconductor Products

BSC014N04LSATMA1

Active
INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 1.4 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC014N04LSATMA1
Current - Continuous Drain (Id) @ 25°C32 A, 100 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs61 nC
Input Capacitance (Ciss) (Max) @ Vds4300 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)96 W, 2.5 W
Rds On (Max) @ Id, Vgs1.4 mOhm
Supplier Device PackageSuperSO8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.41
10$ 1.55
100$ 1.06
500$ 0.85
1000$ 0.78
2000$ 0.73
Digi-Reel® 1$ 2.41
10$ 1.55
100$ 1.06
500$ 0.85
1000$ 0.78
2000$ 0.73
N/A 8512$ 1.89
Tape & Reel (TR) 5000$ 0.70
NewarkEach (Supplied on Full Reel) 5000$ 0.71

Description

General part information

BSC014 Series

Infineon's 40V and 60V product families feature not only the industry’s lowest RDS(on)but also a perfect switching behavior for fast switching applications. 15% lower RDS(on)and 31% lower figure of merit (RDS(on)x Qg) compared to alternative devices has been realized by advanced thin wafer technology.