Discrete Semiconductor Products
STH200N10WF7-2
ActiveSTMicroelectronics
N-CHANNEL 100 V, 3.2 MOHM TYP., 180 A, STRIPFET F7 POWER MOSFET IN AN H2PAK-2 PACKAGE
Discrete Semiconductor Products
STH200N10WF7-2
ActiveSTMicroelectronics
N-CHANNEL 100 V, 3.2 MOHM TYP., 180 A, STRIPFET F7 POWER MOSFET IN AN H2PAK-2 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STH200N10WF7-2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 180 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 4430 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 340 W |
| Rds On (Max) @ Id, Vgs | 4 mOhm |
| Supplier Device Package | H2Pak-2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 6.31 | |
| 10 | $ 5.30 | |||
| 100 | $ 4.29 | |||
| 500 | $ 3.81 | |||
| Digi-Reel® | 1 | $ 6.31 | ||
| 10 | $ 5.30 | |||
| 100 | $ 4.29 | |||
| 500 | $ 3.81 | |||
| N/A | 676 | $ 6.60 | ||
| Tape & Reel (TR) | 1000 | $ 3.26 | ||
| 2000 | $ 3.07 | |||
| Mouser | N/A | 1 | $ 6.57 | |
| 10 | $ 4.54 | |||
| 100 | $ 3.37 | |||
| 500 | $ 2.95 | |||
| 1000 | $ 2.94 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 8.24 | |
| 10 | $ 6.21 | |||
| 25 | $ 5.82 | |||
| 50 | $ 5.43 | |||
| 100 | $ 5.04 | |||
| 250 | $ 4.83 | |||
| 500 | $ 4.62 | |||
| 1000 | $ 4.61 | |||
Description
General part information
STH200N10WF7-2 Series
This N-channel Power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.
Documents
Technical documentation and resources