STH200N10WF7-2 Series
N-channel 100 V, 3.2 mOhm typ., 180 A, STripFET F7 Power MOSFET in an H2PAK-2 package
Manufacturer: STMicroelectronics
Catalog
N-channel 100 V, 3.2 mOhm typ., 180 A, STripFET F7 Power MOSFET in an H2PAK-2 package
| Part | Vgs(th) (Max) @ Id | FET Type | Package / Case | Vgs (Max) | Technology | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 4.5 V | N-Channel | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 20 V | MOSFET (Metal Oxide) | Surface Mount | 4430 pF | 10 V | 93 nC | 4 mOhm | 100 V | 180 A | 175 °C | -55 °C | 340 W | H2Pak-2 |
Description
AI
This N-channel Power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.