TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Discrete Semiconductor Products

STB80N20M5

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STMicroelectronics

N-CHANNEL 200 V, 0.019 OHM TYP., 61 A MDMESH M5 POWER MOSFET IN D2PAK PACKAGE

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DocumentsDatasheet Technical Data Sheet EN +15

Discrete Semiconductor Products

STB80N20M5

Active

STMicroelectronics

N-CHANNEL 200 V, 0.019 OHM TYP., 61 A MDMESH M5 POWER MOSFET IN D2PAK PACKAGE

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DocumentsDatasheet Technical Data Sheet EN +15

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STB80N20M5

Current - Continuous Drain (Id) @ 25°C	61 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	104 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4329 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	190 W
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STB80 Series

N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh M5 Power MOSFET in D2PAK Package

Part	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Qualification	Power Dissipation (Max) [Max]	Grade	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STB80NF55-06-1	4 V	N-Channel	Through Hole	10 V	189 nC	175 °C	-55 °C	55 V	I2PAK TO-262-3 Long Leads TO-262AA	4400 pF	I2PAK	300 W	6.5 mOhm	20 V	MOSFET (Metal Oxide)
STMicroelectronics STB80N4F6AG	4 V	N-Channel	Surface Mount	10 V	36 nC	175 °C	-55 °C	40 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		TO-263 (D2PAK)		6 mOhm	20 V	MOSFET (Metal Oxide)	AEC-Q101	70 W	Automotive
STMicroelectronics STB80NF55L-06T4	1 V	N-Channel	Surface Mount	10 V	136 nC	175 °C	-55 °C	55 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		D2PAK	300 W	6.5 mOhm	20 V	MOSFET (Metal Oxide)
STMicroelectronics STB80NF55-06T4	4 V	N-Channel	Surface Mount	10 V	189 nC	175 °C	-55 °C	55 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4400 pF	D2PAK	300 W	6.5 mOhm	20 V	MOSFET (Metal Oxide)
STMicroelectronics STB80N20M5	5 V	N-Channel	Surface Mount	10 V	104 nC			200 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		D2PAK	190 W	23 mOhm	25 V	MOSFET (Metal Oxide)				61 A	4329 pF	150 °C
STMicroelectronics STB80NF03L-04T4	1 V	N-Channel	Surface Mount	4.5 V 10 V		175 ░C	-60 °C	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5500 pF	D2PAK	300 W	4 mOhm	20 V	MOSFET (Metal Oxide)							110 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 6.52
		10	$ 4.52
		100	$ 3.41
	Digi-Reel®	1	$ 6.52
		10	$ 4.52
		100	$ 3.41
	N/A	586	$ 6.84
	Tape & Reel (TR)	1000	$ 2.79
Newark	Each (Supplied on Cut Tape)	1	$ 6.29
		10	$ 4.34
		25	$ 3.96
		50	$ 3.62
		100	$ 3.38
		250	$ 3.12
		500	$ 3.02
		1000	$ 2.92

Description

General part information

STB80 Series

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.

STB80N20M5

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STB80N20M5

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Technical Specifications

STB80 Series

Pricing

Description

STB80 Series

Documents

Datasheet

Technical Data Sheet EN

Product Change Notice EN

TN1224

UM1575

Flyers (5 of 6)

AN4337

Flyers (5 of 6)

AN4390

Flyers (5 of 6)

AN1703

AN3267

Flyers (5 of 6)

AN4191

Flyers (5 of 6)

TN1225

Flyers (5 of 6)

STB80 Series