STB80 Series

N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh M5 Power MOSFET in D2PAK Package

Catalog

N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh M5 Power MOSFET in D2PAK Package

Part	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Qualification	Power Dissipation (Max) [Max]	Grade	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STB80NF55-06-1	4 V	N-Channel	Through Hole	10 V	189 nC	175 °C	-55 °C	55 V	I2PAK TO-262-3 Long Leads TO-262AA	4400 pF	I2PAK	300 W	6.5 mOhm	20 V	MOSFET (Metal Oxide)
STMicroelectronics STB80N4F6AG	4 V	N-Channel	Surface Mount	10 V	36 nC	175 °C	-55 °C	40 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		TO-263 (D2PAK)		6 mOhm	20 V	MOSFET (Metal Oxide)	AEC-Q101	70 W	Automotive
STMicroelectronics STB80NF55L-06T4	1 V	N-Channel	Surface Mount	10 V	136 nC	175 °C	-55 °C	55 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		D2PAK	300 W	6.5 mOhm	20 V	MOSFET (Metal Oxide)
STMicroelectronics STB80NF55-06T4	4 V	N-Channel	Surface Mount	10 V	189 nC	175 °C	-55 °C	55 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4400 pF	D2PAK	300 W	6.5 mOhm	20 V	MOSFET (Metal Oxide)
STMicroelectronics STB80N20M5	5 V	N-Channel	Surface Mount	10 V	104 nC			200 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		D2PAK	190 W	23 mOhm	25 V	MOSFET (Metal Oxide)				61 A	4329 pF	150 °C
STMicroelectronics STB80NF03L-04T4	1 V	N-Channel	Surface Mount	4.5 V 10 V		175 ░C	-60 °C	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5500 pF	D2PAK	300 W	4 mOhm	20 V	MOSFET (Metal Oxide)							110 nC

Catalog

N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh M5 Power MOSFET in D2PAK Package

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.