Discrete Semiconductor Products

KSD560RTU

Obsolete

NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	KSD560RTU

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	2000
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	1.5 W
Supplier Device Package	TO-220-3
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

NPN Epitaxial Silicon Darlington Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Power - Max [Max]	Operating Temperature	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max)	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor KSD560RTU	2000	TO-220-3	1.5 W	150 °C	Through Hole	100 V	5 A	1 µA	TO-220-3	1.5 V
ON Semiconductor KSD560R	2000	TO-220-3	1.5 W	150 °C	Through Hole	100 V	5 A	1 µA	TO-220-3	1.5 V
ON Semiconductor KSD560YTU	5000	TO-220-3	1.5 W	150 °C	Through Hole	100 V	5 A	1 µA	TO-220-3	1.5 V
ON Semiconductor KSD560RTSTU	2000	TO-220-3	1.5 W	150 °C	Through Hole	100 V	5 A	1 µA	TO-220-3	1.5 V
ON Semiconductor KSD560Y	5000	TO-220-3	1.5 W	150 °C	Through Hole	100 V	5 A	1 µA	TO-220-3	1.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

NPN Epitaxial Silicon Darlington Transistor

Technical documentation and resources