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KSD560 Series

NPN Epitaxial Silicon Darlington Transistor

Manufacturer: ON Semiconductor

Catalog

NPN Epitaxial Silicon Darlington Transistor

Key Features

• Low Speed Switching Industrial Use

• Complement to KSB601

• Low Frequency Power Amplifier

Catalog

NPN Epitaxial Silicon Darlington Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Power - Max [Max]	Operating Temperature	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max)	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor KSD560RTU	2000	TO-220-3	1.5 W	150 °C	Through Hole	100 V	5 A	1 µA	TO-220-3	1.5 V
ON Semiconductor KSD560R	2000	TO-220-3	1.5 W	150 °C	Through Hole	100 V	5 A	1 µA	TO-220-3	1.5 V
ON Semiconductor KSD560YTU	5000	TO-220-3	1.5 W	150 °C	Through Hole	100 V	5 A	1 µA	TO-220-3	1.5 V
ON Semiconductor KSD560RTSTU	2000	TO-220-3	1.5 W	150 °C	Through Hole	100 V	5 A	1 µA	TO-220-3	1.5 V
ON Semiconductor KSD560Y	5000	TO-220-3	1.5 W	150 °C	Through Hole	100 V	5 A	1 µA	TO-220-3	1.5 V