Discrete Semiconductor Products

KSD560Y

Obsolete

TRANS NPN DARL 100V 5A TO220-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN DARL 100V 5A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	KSD560Y

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	5000
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	1.5 W
Supplier Device Package	TO-220-3
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

NPN Epitaxial Silicon Darlington Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Power - Max [Max]	Operating Temperature	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max)	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor KSD560RTU	2000	TO-220-3	1.5 W	150 °C	Through Hole	100 V	5 A	1 µA	TO-220-3	1.5 V
ON Semiconductor KSD560R	2000	TO-220-3	1.5 W	150 °C	Through Hole	100 V	5 A	1 µA	TO-220-3	1.5 V
ON Semiconductor KSD560YTU	5000	TO-220-3	1.5 W	150 °C	Through Hole	100 V	5 A	1 µA	TO-220-3	1.5 V
ON Semiconductor KSD560RTSTU	2000	TO-220-3	1.5 W	150 °C	Through Hole	100 V	5 A	1 µA	TO-220-3	1.5 V
ON Semiconductor KSD560Y	5000	TO-220-3	1.5 W	150 °C	Through Hole	100 V	5 A	1 µA	TO-220-3	1.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

NPN Epitaxial Silicon Darlington Transistor

Technical documentation and resources