Discrete Semiconductor Products

SCTH60N120G2-7

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STMicroelectronics

SILICON CARBIDE POWER MOSFET 1200 V, 35 MOHM TYP., 60 A IN AN H2PAK-7 PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheet Product Change Notice EN +25

Discrete Semiconductor Products

SCTH60N120G2-7

Active

STMicroelectronics

SILICON CARBIDE POWER MOSFET 1200 V, 35 MOHM TYP., 60 A IN AN H2PAK-7 PACKAGE

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN +25

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCTH60N120G2-7

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	1.2 kV
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1969 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Power Dissipation (Max)	390 W
Rds On (Max) @ Id, Vgs	52 mOhm
Supplier Device Package	H2PAK-7
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	5 V

SCTH60N120G2-7 Series

Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an H2PAK-7 package

Part	Mounting Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics SCTH60N120G2-7	Surface Mount	22 V	-10 V	1.2 kV	5 V	175 °C	-55 °C	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	H2PAK-7	N-Channel	52 mOhm	94 nC	1969 pF	390 W	60 A	18 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00
Newark	Each (Supplied on Cut Tape)	1	$ 30.76
		10	$ 29.32
		25	$ 27.59
		50	$ 26.21
		100	$ 24.68
		250	$ 23.65
		500	$ 22.85
		1000	$ 21.95

Description

General part information

SCTH60N120G2-7 Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.