SCTH60N120G2-7 Series

Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an H2PAK-7 package

Catalog

Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an H2PAK-7 package

Part	Mounting Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics SCTH60N120G2-7	Surface Mount	22 V	-10 V	1.2 kV	5 V	175 °C	-55 °C	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	H2PAK-7	N-Channel	52 mOhm	94 nC	1969 pF	390 W	60 A	18 V

Catalog

Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an H2PAK-7 package

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.