Discrete Semiconductor Products

APT100MC120JCU2

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Microchip Technology

SICFET N-CH 1200V 143A SOT227

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Discrete Semiconductor Products

APT100MC120JCU2

Active

Microchip Technology

SICFET N-CH 1200V 143A SOT227

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	APT100MC120JCU2

Current - Continuous Drain (Id) @ 25°C	143 A
Drain to Source Voltage (Vdss)	1200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	360 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5960 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	600 W
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	SOT-227
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	2.3 V

IGBT-FIELDSTOP-600V Series

1200V Non-Punch-Thru IGBT

Part	IGBT Type	Input	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power - Max [Max]	Input Capacitance (Cies) @ Vce	Voltage - Collector Emitter Breakdown (Max) [Max]	Configuration	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Switching Energy	Gate Charge	Td (on/off) @ 25°C	Test Condition	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Current - Collector (Ic) (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max) [Min]	Vgs (Max) [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Td (on/off) @ 25°C	Reverse Recovery Time (trr)
Microchip Technology APT200GN60J	Trench Field Stop	Standard	ISOTOP	-55 °C	175 ░C	Chassis Mount	682 W	14.1 nF	600 V	Single	ISOTOP®	25 µA
Microchip Technology APT50GN60BG	Trench Field Stop		TO-247-3	-55 °C	175 ░C	Through Hole	366 W		600 V		TO-247 [B]		1185 µJ 1565 µJ	325 nC	20 ns 230 ns	4.3 Ohm 15 V 50 A 400 V	150 A	107 A	1.85 V
Microchip Technology APT100GN60LDQ4G	Trench Field Stop		TO-264-3 TO-264AA	-55 °C	175 ░C	Through Hole	625 W		600 V		TO-264 [L]		2.675 mJ 4.75 mJ	600 nC		1 Ohm 15 V 100 A 400 V	300 A		1.85 V	31 ns 310 ns	229 A
Microchip Technology APT100MC120JCU2			SOT-227-4 miniBLOC	-40 °C	150 °C	Chassis Mount					SOT-227											143 A	N-Channel	5960 pF	17 mOhm	600 W	360 nC	-10 V	25 V	2.3 V	1200 V
Microchip Technology APT100GT120JRDQ4	NPT	Standard	ISOTOP	-55 °C	150 °C	Chassis Mount	570 W	7.85 nF	1200 V	Single	ISOTOP®	200 µA						123 A	3.7 V
Microchip Technology APT200GN60JDQ4	Trench Field Stop	Standard	ISOTOP	-55 °C	175 ░C	Chassis Mount	682 W	14.1 nF	600 V	Single	ISOTOP®	50 µA
Microchip Technology APT200GN60B2G	Trench Field Stop		TO-247-3	-55 °C	175 ░C	Through Hole	682 W		600 V				11 mJ 13 mJ	1180 nC		1 Ohm 15 V 200 A 400 V	600 A			50 ns 560 ns
Microchip Technology APT75GN60SDQ2G	Trench Field Stop		D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	-55 °C	175 ░C	Surface Mount	536 W		600 V		D3PAK		2140 µJ 2500 µJ		47 ns	1 Ohm 15 V 75 A 400 V	225 A	155 A	1.85 V													385 ns	25 ns
Microchip Technology APT50GN60BDQ2G	Trench Field Stop		TO-247-3	-55 °C	175 ░C	Through Hole	366 W		600 V		TO-247 [B]		1185 µJ 1565 µJ	325 nC	20 ns 230 ns	4.3 Ohm 15 V 50 A 400 V	150 A	107 A	1.85 V
Microchip Technology APT20GN60BDQ1G	Trench Field Stop		TO-247-3	-55 °C	175 ░C	Through Hole	136 W		600 V		TO-247 [B]		230 µJ 580 µJ	120 nC	9 ns	4.3 Ohm 15 V 20 A 400 V	60 A	40 A	1.9 V													140 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IGBT-FIELDSTOP-600V Series

IGBT products from Microchip provide high-quality solutions for a

wide range of high-voltage and high-power applications. The switching frequency

range spans from DC for minimal conduction loss to 150 kHz for

Documents

Technical documentation and resources

No documents available