IGBT-FIELDSTOP-600V Series

1200V Non-Punch-Thru IGBT

Catalog

1200V Non-Punch-Thru IGBT

Part	IGBT Type	Input	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power - Max [Max]	Input Capacitance (Cies) @ Vce	Voltage - Collector Emitter Breakdown (Max) [Max]	Configuration	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Switching Energy	Gate Charge	Td (on/off) @ 25°C	Test Condition	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Current - Collector (Ic) (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max) [Min]	Vgs (Max) [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Td (on/off) @ 25°C	Reverse Recovery Time (trr)
Microchip Technology APT200GN60J	Trench Field Stop	Standard	ISOTOP	-55 °C	175 ░C	Chassis Mount	682 W	14.1 nF	600 V	Single	ISOTOP®	25 µA
Microchip Technology APT50GN60BG	Trench Field Stop		TO-247-3	-55 °C	175 ░C	Through Hole	366 W		600 V		TO-247 [B]		1185 µJ 1565 µJ	325 nC	20 ns 230 ns	4.3 Ohm 15 V 50 A 400 V	150 A	107 A	1.85 V
Microchip Technology APT100GN60LDQ4G	Trench Field Stop		TO-264-3 TO-264AA	-55 °C	175 ░C	Through Hole	625 W		600 V		TO-264 [L]		2.675 mJ 4.75 mJ	600 nC		1 Ohm 15 V 100 A 400 V	300 A		1.85 V	31 ns 310 ns	229 A
Microchip Technology APT100MC120JCU2			SOT-227-4 miniBLOC	-40 °C	150 °C	Chassis Mount					SOT-227											143 A	N-Channel	5960 pF	17 mOhm	600 W	360 nC	-10 V	25 V	2.3 V	1200 V
Microchip Technology APT100GT120JRDQ4	NPT	Standard	ISOTOP	-55 °C	150 °C	Chassis Mount	570 W	7.85 nF	1200 V	Single	ISOTOP®	200 µA						123 A	3.7 V
Microchip Technology APT200GN60JDQ4	Trench Field Stop	Standard	ISOTOP	-55 °C	175 ░C	Chassis Mount	682 W	14.1 nF	600 V	Single	ISOTOP®	50 µA
Microchip Technology APT200GN60B2G	Trench Field Stop		TO-247-3	-55 °C	175 ░C	Through Hole	682 W		600 V				11 mJ 13 mJ	1180 nC		1 Ohm 15 V 200 A 400 V	600 A			50 ns 560 ns
Microchip Technology APT75GN60SDQ2G	Trench Field Stop		D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	-55 °C	175 ░C	Surface Mount	536 W		600 V		D3PAK		2140 µJ 2500 µJ		47 ns	1 Ohm 15 V 75 A 400 V	225 A	155 A	1.85 V													385 ns	25 ns
Microchip Technology APT50GN60BDQ2G	Trench Field Stop		TO-247-3	-55 °C	175 ░C	Through Hole	366 W		600 V		TO-247 [B]		1185 µJ 1565 µJ	325 nC	20 ns 230 ns	4.3 Ohm 15 V 50 A 400 V	150 A	107 A	1.85 V
Microchip Technology APT20GN60BDQ1G	Trench Field Stop		TO-247-3	-55 °C	175 ░C	Through Hole	136 W		600 V		TO-247 [B]		230 µJ 580 µJ	120 nC	9 ns	4.3 Ohm 15 V 20 A 400 V	60 A	40 A	1.9 V													140 ns

Catalog

1200V Non-Punch-Thru IGBT

Description

IGBT products from Microchip provide high-quality solutions for a wide range of high-voltage and high-power applications. The switching frequency range spans from DC for minimal conduction loss to 150 kHz for very-high-power-density Switch Mode Power Supply (SMPS) applications. There are six product series that utilize three different IGBT technologies: Non-Punch-Through (NPT), Punch-Through (PT) and field stop. All standard IGBT products are available as a single IGBT or as a Combi product packaged with an anti-parallel DQ series diode. The Ultra Fast NPT-IGBT® family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and the best trade-off between conduction and switching losses.