Discrete Semiconductor Products
STT6N3LLH6
ActiveSTMicroelectronics
N-CHANNEL 30 V, 0.021 OHM, 6 A STRIPFET(TM) VI DEEPGATE(TM) POWER MOSFET IN SOT23-6L PACKAGE
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Discrete Semiconductor Products
STT6N3LLH6
ActiveSTMicroelectronics
N-CHANNEL 30 V, 0.021 OHM, 6 A STRIPFET(TM) VI DEEPGATE(TM) POWER MOSFET IN SOT23-6L PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STT6N3LLH6 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 3.6 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 283 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-6 |
| Power Dissipation (Max) | 1.6 W |
| Rds On (Max) @ Id, Vgs | 25 mOhm |
| Supplier Device Package | SOT-23-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STT6N3LLH6 Series
This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
Documents
Technical documentation and resources