STT6N3LLH6 Series

N-channel 30 V, 0.021 Ohm, 6 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in SOT23-6L package

Catalog

N-channel 30 V, 0.021 Ohm, 6 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in SOT23-6L package

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Operating Temperature	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Package / Case	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type
STMicroelectronics STT6N3LLH6	SOT-23-6	3.6 nC	30 V	MOSFET (Metal Oxide)	150 °C	1 V	283 pF	N-Channel	SOT-23-6	20 V	1.6 W	4.5 V 10 V	6 A	25 mOhm	Surface Mount

Catalog

N-channel 30 V, 0.021 Ohm, 6 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in SOT23-6L package

Description

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.