STP18NM80
ActiveMOSFET TRANSISTOR, N CHANNEL, 17 A, 800 V, 0.25 OHM, 10 V, 4 V ROHS COMPLIANT: YES
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STP18NM80
ActiveMOSFET TRANSISTOR, N CHANNEL, 17 A, 800 V, 0.25 OHM, 10 V, 4 V ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STP18NM80 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 17 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2070 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 190 W |
| Rds On (Max) @ Id, Vgs [Max] | 295 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
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Description
General part information
STP18NM80 Series
These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST’s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Documents
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