Discrete Semiconductor Products
STD5N52U
ActiveSTMicroelectronics
MOSFET TRANSISTOR, N CHANNEL, 4.4 A, 525 V, 1.28 OHM, 10 V, 3.75 V ROHS COMPLIANT: YES
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Discrete Semiconductor Products
STD5N52U
ActiveSTMicroelectronics
MOSFET TRANSISTOR, N CHANNEL, 4.4 A, 525 V, 1.28 OHM, 10 V, 3.75 V ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | STD5N52U |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.4 A |
| Drain to Source Voltage (Vdss) | 525 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 16.9 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 529 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) [Max] | 70 W |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.17 | |
| 10 | $ 0.96 | |||
| 100 | $ 0.75 | |||
| 500 | $ 0.63 | |||
| 1000 | $ 0.52 | |||
| Digi-Reel® | 1 | $ 1.17 | ||
| 10 | $ 0.96 | |||
| 100 | $ 0.75 | |||
| 500 | $ 0.63 | |||
| 1000 | $ 0.52 | |||
| N/A | 4985 | $ 1.34 | ||
| Tape & Reel (TR) | 2500 | $ 0.49 | ||
| 5000 | $ 0.46 | |||
| 12500 | $ 0.44 | |||
| Mouser | N/A | 1 | $ 1.17 | |
| 10 | $ 0.95 | |||
| 100 | $ 0.67 | |||
| 500 | $ 0.54 | |||
| 1000 | $ 0.50 | |||
| 2500 | $ 0.45 | |||
| 5000 | $ 0.44 | |||
| 25000 | $ 0.43 | |||
| Newark | Each (Supplied on Full Reel) | 2500 | $ 0.72 | |
| 5000 | $ 0.70 | |||
| 10000 | $ 0.70 | |||
Description
General part information
STD5N52 Series
This device is N-channel Power MOSFET developed using UltraFASTmesh technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode.
Documents
Technical documentation and resources
