STD5N52 Series

N-channel 525 V, 1.2 Ohm typ., 4.4 A SuperMESH3 Power MOSFET in a DPAK package

Catalog

N-channel 525 V, 1.2 Ohm typ., 4.4 A SuperMESH3 Power MOSFET in a DPAK package

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STD5N52U	DPAK	525 V	70 W	4.5 V	1.5 Ohm	4.4 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	N-Channel	30 V	10 V	150 °C	-55 °C	MOSFET (Metal Oxide)	16.9 nC	529 pF
STMicroelectronics STD5N52K3	DPAK	525 V	70 W	4.5 V	1.5 Ohm	4.4 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	N-Channel	30 V	10 V	150 °C	-55 °C	MOSFET (Metal Oxide)			17 nC	545 pF

Catalog

N-channel 525 V, 1.2 Ohm typ., 4.4 A SuperMESH3 Power MOSFET in a DPAK package

Description

This device is N-channel Power MOSFET developed using UltraFASTmesh technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode.