Discrete Semiconductor Products

FDP2614

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ON Semiconductor

POWER MOSFET, N CHANNEL, 200 V, 62 A, 0.0229 OHM, TO-220, THROUGH HOLE

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DocumentsProduct Change Notice EN Datasheet +1

Discrete Semiconductor Products

FDP2614

Active

ON Semiconductor

POWER MOSFET, N CHANNEL, 200 V, 62 A, 0.0229 OHM, TO-220, THROUGH HOLE

Deep-Dive with AI

DocumentsProduct Change Notice EN Datasheet +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDP2614

Current - Continuous Drain (Id) @ 25°C	62 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	99 nC
Input Capacitance (Ciss) (Max) @ Vds	7230 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	260 W
Rds On (Max) @ Id, Vgs	27 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FDP2614 Series

N-Channel PowerTrench<sup>®</sup> MOSFET 200V, 62A, 27mΩ

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDP2614	200 V	27 mOhm	-55 °C	150 °C	N-Channel	62 A	7230 pF	10 V	260 W	Through Hole	5 V	TO-220-3	TO-220-3	99 nC	MOSFET (Metal Oxide)	30 V
ON Semiconductor FDP2670	200 V		-65 °C	175 ░C	N-Channel	19 A	1320 pF	10 V	93 W	Through Hole	4.5 V	TO-220-3	TO-220-3		MOSFET (Metal Oxide)	20 V	38 nC	130 mOhm
ON Semiconductor FDP26N40	400 V	160 mOhm	-55 °C	150 °C	N-Channel	26 A	3185 pF	10 V	265 W	Through Hole	5 V	TO-220-3	TO-220-3		MOSFET (Metal Oxide)	30 V	60 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.55
		10	$ 3.71
		50	$ 2.39
		100	$ 2.66
		500	$ 2.22
		1000	$ 2.18
Newark	Each	500	$ 2.44
ON Semiconductor	N/A	1	$ 2.32

Description

General part information

FDP2614 Series

This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

Package Drawing-340AT-TO-220-3LD

Package Drawing