Discrete Semiconductor Products

FDP26N40

Obsolete

ON Semiconductor

MOSFET N-CH 400V 26A TO220-3

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Discrete Semiconductor Products

FDP26N40

Obsolete

ON Semiconductor

MOSFET N-CH 400V 26A TO220-3

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDP26N40

Current - Continuous Drain (Id) @ 25°C	26 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	3185 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	265 W
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FDP2614 Series

N-Channel PowerTrench<sup>®</sup> MOSFET 200V, 62A, 27mΩ

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDP2614	200 V	27 mOhm	-55 °C	150 °C	N-Channel	62 A	7230 pF	10 V	260 W	Through Hole	5 V	TO-220-3	TO-220-3	99 nC	MOSFET (Metal Oxide)	30 V
ON Semiconductor FDP2670	200 V		-65 °C	175 ░C	N-Channel	19 A	1320 pF	10 V	93 W	Through Hole	4.5 V	TO-220-3	TO-220-3		MOSFET (Metal Oxide)	20 V	38 nC	130 mOhm
ON Semiconductor FDP26N40	400 V	160 mOhm	-55 °C	150 °C	N-Channel	26 A	3185 pF	10 V	265 W	Through Hole	5 V	TO-220-3	TO-220-3		MOSFET (Metal Oxide)	30 V	60 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDP2614 Series

This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Documents

Technical documentation and resources

No documents available