FDP2614 Series

N-Channel PowerTrench® MOSFET 200V, 62A, 27mΩ

Catalog

N-Channel PowerTrench® MOSFET 200V, 62A, 27mΩ

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDP2614	200 V	27 mOhm	-55 °C	150 °C	N-Channel	62 A	7230 pF	10 V	260 W	Through Hole	5 V	TO-220-3	TO-220-3	99 nC	MOSFET (Metal Oxide)	30 V
ON Semiconductor FDP2670	200 V		-65 °C	175 ░C	N-Channel	19 A	1320 pF	10 V	93 W	Through Hole	4.5 V	TO-220-3	TO-220-3		MOSFET (Metal Oxide)	20 V	38 nC	130 mOhm
ON Semiconductor FDP26N40	400 V	160 mOhm	-55 °C	150 °C	N-Channel	26 A	3185 pF	10 V	265 W	Through Hole	5 V	TO-220-3	TO-220-3		MOSFET (Metal Oxide)	30 V	60 nC

Catalog

N-Channel PowerTrench® MOSFET 200V, 62A, 27mΩ

Key Features

• RDS(on)= 22.9mΩ ( Typ.) @ VGS= 10V, ID= 31A

• Fast switching speed

• Low Gate Charge

• High performance trench technology for extremely low RDS(on)

• High power and current handling capability

• RoHS compliant

Description

This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.