JAN2N3743
ActivePNP SILICON HIGH-VOLTAGE -200V TO -300V, -0.2A
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JAN2N3743
ActivePNP SILICON HIGH-VOLTAGE -200V TO -300V, -0.2A
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Technical Specifications
Parameters and characteristics for this part
| Specification | JAN2N3743 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 200 mA |
| Current - Collector Cutoff (Max) [Max] | 250 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 50 hFE |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Power - Max [Max] | 1 W |
| Qualification | MIL-PRF-19500/397 |
| Supplier Device Package | TO-39 (TO-205AD) |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 1.2 V |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 268.13 | |
Description
General part information
JAN2N3743-Transistor Series
This specification covers the performance requirements for PNP, silicon, high-voltage 2N3743, 2N4930 and 2N4931 transistor. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/397. Two levels of product assurance (JANHC and JANKC) for die are provided for each unencapsulated device.
Documents
Technical documentation and resources