Specification	IRF1010NSTRLPBF

Current - Continuous Drain (Id) @ 25°C	85 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3210 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF1010 Series

Part	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)
INFINEON IRF1010EZPBF	60 V	Through Hole	8.5 mOhm	10 V	175 °C	-55 °C	TO-220AB	MOSFET (Metal Oxide)	86 nC	2810 pF	N-Channel	4 V	75 A	20 V	TO-220-3	140 W
INFINEON IRF1010ZSTRLPBF	55 V	Surface Mount	7.5 mOhm	10 V	175 °C	-55 °C	D2PAK	MOSFET (Metal Oxide)			N-Channel	4 V	75 A	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	140 W	95 nC	2840 pF
INFINEON IRF1010NSTRLPBF	55 V	Surface Mount	11 mOhm	10 V	175 °C	-55 °C	D2PAK	MOSFET (Metal Oxide)	120 nC	3210 pF	N-Channel	4 V	85 A	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB				180 W
INFINEON IRF1010EPBF	60 V	Through Hole	12 mOhm	10 V	175 °C	-55 °C	TO-220AB	MOSFET (Metal Oxide)	130 nC	3210 pF	N-Channel	4 V	84 A	20 V	TO-220-3				200 W
INFINEON IRF1010NPBF	55 V	Through Hole	11 mOhm	10 V	175 °C	-55 °C	TO-220AB	MOSFET (Metal Oxide)	120 nC	3210 pF	N-Channel	4 V	85 A	20 V	TO-220-3				180 W
INFINEON IRF1010ESTRLPBF	60 V	Surface Mount	12 mOhm	10 V	175 °C	-55 °C	D2PAK	MOSFET (Metal Oxide)	130 nC	3210 pF	N-Channel	4 V	84 A	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB				200 W
INFINEON IRF1010EZSTRLP	60 V	Surface Mount	8.5 mOhm	10 V	175 °C	-55 °C	D2PAK	MOSFET (Metal Oxide)	86 nC	2810 pF	N-Channel	4 V	75 A	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	140 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.56
		10	$ 1.65
		100	$ 1.13
	Digi-Reel®	1	$ 2.56
		10	$ 1.65
		100	$ 1.13
	N/A	864	$ 1.32
	Tape & Reel (TR)	800	$ 0.86
		1600	$ 0.80
		2400	$ 0.76
		4000	$ 0.76
Mouser	N/A	1	$ 1.47
		10	$ 1.11
		100	$ 0.93
		500	$ 0.84
		800	$ 0.73
Newark	Each (Supplied on Cut Tape)	1	$ 1.88
		10	$ 1.47
		25	$ 1.40
		50	$ 1.31
		100	$ 1.24
		250	$ 1.22
		500	$ 1.13
		1600	$ 1.04

Description

General part information

IRF1010 Series

The IR MOSFET family ofpower MOSFETsutilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters,SMPS,lighting, load switches as well as battery powered applications.

IRF1010NSTRLPBF

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Technical Specifications

IRF1010 Series

Pricing

Description

IRF1010 Series

Documents

MOSFET OptiMOS™ datasheet explanation (PDF)

IR Part Numbering System

Datasheet

Application Note EN

IRF1010 Series