Discrete Semiconductor Products

IRF1010EZPBF

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INFINEON

POWER MOSFET, N CHANNEL, 60 V, 75 A, 0.0085 OHM, TO-220AB, THROUGH HOLE

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DocumentsIR Part Numbering System Datasheet

Discrete Semiconductor Products

IRF1010EZPBF

Active

INFINEON

POWER MOSFET, N CHANNEL, 60 V, 75 A, 0.0085 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

DocumentsIR Part Numbering System Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF1010EZPBF

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	86 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2810 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	140 W
Rds On (Max) @ Id, Vgs	8.5 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF1010 Series

Part	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)
INFINEON IRF1010EZPBF	60 V	Through Hole	8.5 mOhm	10 V	175 °C	-55 °C	TO-220AB	MOSFET (Metal Oxide)	86 nC	2810 pF	N-Channel	4 V	75 A	20 V	TO-220-3	140 W
INFINEON IRF1010ZSTRLPBF	55 V	Surface Mount	7.5 mOhm	10 V	175 °C	-55 °C	D2PAK	MOSFET (Metal Oxide)			N-Channel	4 V	75 A	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	140 W	95 nC	2840 pF
INFINEON IRF1010NSTRLPBF	55 V	Surface Mount	11 mOhm	10 V	175 °C	-55 °C	D2PAK	MOSFET (Metal Oxide)	120 nC	3210 pF	N-Channel	4 V	85 A	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB				180 W
INFINEON IRF1010EPBF	60 V	Through Hole	12 mOhm	10 V	175 °C	-55 °C	TO-220AB	MOSFET (Metal Oxide)	130 nC	3210 pF	N-Channel	4 V	84 A	20 V	TO-220-3				200 W
INFINEON IRF1010NPBF	55 V	Through Hole	11 mOhm	10 V	175 °C	-55 °C	TO-220AB	MOSFET (Metal Oxide)	120 nC	3210 pF	N-Channel	4 V	85 A	20 V	TO-220-3				180 W
INFINEON IRF1010ESTRLPBF	60 V	Surface Mount	12 mOhm	10 V	175 °C	-55 °C	D2PAK	MOSFET (Metal Oxide)	130 nC	3210 pF	N-Channel	4 V	84 A	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB				200 W
INFINEON IRF1010EZSTRLP	60 V	Surface Mount	8.5 mOhm	10 V	175 °C	-55 °C	D2PAK	MOSFET (Metal Oxide)	86 nC	2810 pF	N-Channel	4 V	75 A	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	140 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 0.83
		10	$ 0.64
		100	$ 0.60
		500	$ 0.59
		1000	$ 0.54
		3000	$ 0.48
Digikey	N/A	4352	$ 1.15
	Tube	1	$ 1.90
		10	$ 1.22
		100	$ 0.83
		500	$ 0.66
		1000	$ 0.61
		2000	$ 0.61
Newark	Each	1	$ 1.42
		10	$ 1.10
		100	$ 0.78
		500	$ 0.71
		1000	$ 0.66
		3000	$ 0.63
		10000	$ 0.60

Description

General part information

IRF1010 Series

The IRF1010EZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Documents

Technical documentation and resources