IRF1010 Series

Manufacturer: INFINEON

Catalog

POWER MOSFET, N CHANNEL, 60 V, 75 A, 0.0085 OHM, TO-220AB, THROUGH HOLE

Part	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)
INFINEON IRF1010EZPBF	60 V	Through Hole	8.5 mOhm	10 V	175 °C	-55 °C	TO-220AB	MOSFET (Metal Oxide)	86 nC	2810 pF	N-Channel	4 V	75 A	20 V	TO-220-3	140 W
INFINEON IRF1010ZSTRLPBF	55 V	Surface Mount	7.5 mOhm	10 V	175 °C	-55 °C	D2PAK	MOSFET (Metal Oxide)			N-Channel	4 V	75 A	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	140 W	95 nC	2840 pF
INFINEON IRF1010NSTRLPBF	55 V	Surface Mount	11 mOhm	10 V	175 °C	-55 °C	D2PAK	MOSFET (Metal Oxide)	120 nC	3210 pF	N-Channel	4 V	85 A	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB				180 W
INFINEON IRF1010EPBF	60 V	Through Hole	12 mOhm	10 V	175 °C	-55 °C	TO-220AB	MOSFET (Metal Oxide)	130 nC	3210 pF	N-Channel	4 V	84 A	20 V	TO-220-3				200 W
INFINEON IRF1010NPBF	55 V	Through Hole	11 mOhm	10 V	175 °C	-55 °C	TO-220AB	MOSFET (Metal Oxide)	120 nC	3210 pF	N-Channel	4 V	85 A	20 V	TO-220-3				180 W
INFINEON IRF1010ESTRLPBF	60 V	Surface Mount	12 mOhm	10 V	175 °C	-55 °C	D2PAK	MOSFET (Metal Oxide)	130 nC	3210 pF	N-Channel	4 V	84 A	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB				200 W
INFINEON IRF1010EZSTRLP	60 V	Surface Mount	8.5 mOhm	10 V	175 °C	-55 °C	D2PAK	MOSFET (Metal Oxide)	86 nC	2810 pF	N-Channel	4 V	75 A	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	140 W