Discrete Semiconductor Products

IMBG65R010M2HXTMA1

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INFINEON

SIC MOSFET, N-CH, 650V, 158A, TO-263 ROHS COMPLIANT: YES

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DocumentsIMBG65R010M2HXTMA1 | Datasheet

Discrete Semiconductor Products

IMBG65R010M2HXTMA1

Active

INFINEON

SIC MOSFET, N-CH, 650V, 158A, TO-263 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsIMBG65R010M2HXTMA1 | Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IMBG65R010M2HXTMA1

Current - Continuous Drain (Id) @ 25°C	158 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	15 V, 20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	112 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4001 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Power Dissipation (Max)	535 W
Rds On (Max) @ Id, Vgs	9.1 mOhm
Supplier Device Package	PG-TO263-7-12
Vgs (Max)	-7 V, 23 V
Vgs(th) (Max) @ Id	5.6 V

650V G2 Series

Part	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]
INFINEON IMZA65R050M2HXKSA1	SiC (Silicon Carbide Junction Transistor)	5.6 V	38 A	-7 V 23 V	Through Hole	22 nC	46 mOhm	TO-247-4	15 V 20 V	N-Channel	650 V	790 pF	175 °C	-55 °C	PG-TO247-4-8	153 W
INFINEON IMBG65R060M2HXTMA1		5.6 V	34.9 A	-7 V 23 V	Surface Mount		55 mOhm	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	15 V 20 V	N-Channel	650 V	669 pF	175 °C	-55 °C	PG-TO263-7-12	148 W	18 nC
INFINEON IMBG65R010M2HXTMA1		5.6 V	158 A	-7 V 23 V	Surface Mount	112 nC	9.1 mOhm	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	15 V 20 V	N-Channel	650 V		175 °C	-55 °C	PG-TO263-7-12	535 W		4001 pF
INFINEON IMTA65R060M2HXTMA1		5.6 V	37 A				55 mOhm		15 V 20 V	N-Channel	650 V	669 pF	175 °C	-55 °C		165 W	18 nC		25 V	-10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	952	$ 20.98
Mouser	N/A	1	$ 19.01
		10	$ 16.75
		100	$ 14.49
		250	$ 14.04
		1000	$ 14.03
Newark	Each (Supplied on Cut Tape)	1	$ 20.84
		10	$ 17.13
		25	$ 16.49
		50	$ 16.10
		100	$ 15.72
		250	$ 14.99
		500	$ 14.36

Description

General part information

650V G2 Series

The CoolSiC™ MOSFET 650 V, 10 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Documents

Technical documentation and resources

IMBG65R010M2HXTMA1 | Datasheet

Datasheet