Discrete Semiconductor Products

IMTA65R060M2HXTMA1

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INFINEON

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 37 A, 650 V, 0.055 OHM, LHSOF

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Discrete Semiconductor Products

IMTA65R060M2HXTMA1

Active

INFINEON

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 37 A, 650 V, 0.055 OHM, LHSOF

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IMTA65R060M2HXTMA1

Current - Continuous Drain (Id) @ 25°C	37 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	15 V, 20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC
Input Capacitance (Ciss) (Max) @ Vds	669 pF
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	165 W
Rds On (Max) @ Id, Vgs	55 mOhm
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	5.6 V

650V G2 Series

Part	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]
INFINEON IMZA65R050M2HXKSA1	SiC (Silicon Carbide Junction Transistor)	5.6 V	38 A	-7 V 23 V	Through Hole	22 nC	46 mOhm	TO-247-4	15 V 20 V	N-Channel	650 V	790 pF	175 °C	-55 °C	PG-TO247-4-8	153 W
INFINEON IMBG65R060M2HXTMA1		5.6 V	34.9 A	-7 V 23 V	Surface Mount		55 mOhm	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	15 V 20 V	N-Channel	650 V	669 pF	175 °C	-55 °C	PG-TO263-7-12	148 W	18 nC
INFINEON IMBG65R010M2HXTMA1		5.6 V	158 A	-7 V 23 V	Surface Mount	112 nC	9.1 mOhm	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	15 V 20 V	N-Channel	650 V		175 °C	-55 °C	PG-TO263-7-12	535 W		4001 pF
INFINEON IMTA65R060M2HXTMA1		5.6 V	37 A				55 mOhm		15 V 20 V	N-Channel	650 V	669 pF	175 °C	-55 °C		165 W	18 nC		25 V	-10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 7.37
		10	$ 6.66
		25	$ 6.35
		100	$ 5.51
		250	$ 5.26
		500	$ 4.80
		1000	$ 4.18
	Digi-Reel®	1	$ 7.37
		10	$ 6.66
		25	$ 6.35
		100	$ 5.51
		250	$ 5.26
		500	$ 4.80
		1000	$ 4.18
	N/A	289	$ 5.90
	Tape & Reel (TR)	2000	$ 4.02
Mouser	N/A	1	$ 6.35
		10	$ 5.47
		25	$ 5.17
		100	$ 4.50
		500	$ 3.96
		1000	$ 3.89
		2000	$ 3.30
Newark	Each (Supplied on Cut Tape)	1	$ 5.28
		10	$ 4.56
		25	$ 4.31
		50	$ 4.02
		100	$ 3.74
		250	$ 3.52
		500	$ 3.30
		1000	$ 3.23

Description

General part information

650V G2 Series

The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the standard 8x8 and it boasts the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.

Documents

Technical documentation and resources