650V G2 Series

Manufacturer: INFINEON

Catalog

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 38 A, 650 V, 0.046 OHM, TO-247

Part	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]
INFINEON IMZA65R050M2HXKSA1	SiC (Silicon Carbide Junction Transistor)	5.6 V	38 A	-7 V 23 V	Through Hole	22 nC	46 mOhm	TO-247-4	15 V 20 V	N-Channel	650 V	790 pF	175 °C	-55 °C	PG-TO247-4-8	153 W
INFINEON IMBG65R060M2HXTMA1		5.6 V	34.9 A	-7 V 23 V	Surface Mount		55 mOhm	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	15 V 20 V	N-Channel	650 V	669 pF	175 °C	-55 °C	PG-TO263-7-12	148 W	18 nC
INFINEON IMBG65R010M2HXTMA1		5.6 V	158 A	-7 V 23 V	Surface Mount	112 nC	9.1 mOhm	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	15 V 20 V	N-Channel	650 V		175 °C	-55 °C	PG-TO263-7-12	535 W		4001 pF
INFINEON IMTA65R060M2HXTMA1		5.6 V	37 A				55 mOhm		15 V 20 V	N-Channel	650 V	669 pF	175 °C	-55 °C		165 W	18 nC		25 V	-10 V