Integrated Circuits (ICs)

IR2106SPBF

NRND

INFINEON

DUAL DRIVER IC, HIGH SIDE AND LOW SIDE, 10V-20V SUPPLY, 350MA OUT, 200NS DELAY, SOIC-8

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Integrated Circuits (ICs)

IR2106SPBF

NRND

INFINEON

DUAL DRIVER IC, HIGH SIDE AND LOW SIDE, 10V-20V SUPPLY, 350MA OUT, 200NS DELAY, SOIC-8

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2106SPBF

Channel Type	Independent
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	0.8 V, 2.9 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Rise / Fall Time (Typ) [custom]	150 ns
Rise / Fall Time (Typ) [custom]	50 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2106 Series

Part	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Channel Type	Mounting Type	Logic Voltage - VIL, VIH	High Side Voltage - Max (Bootstrap) [Max]	Package / Case	Number of Drivers	Voltage - Supply [Max]	Voltage - Supply [Min]	Input Type	Operating Temperature [Min]	Operating Temperature [Max]	Driven Configuration	Supplier Device Package	Package / Case	Package / Case
INFINEON IR2106	IGBT MOSFET (N-Channel) N-Channel MOSFET	150 ns	50 ns	Independent	Through Hole	0.8 V 2.9 V	600 V	8-DIP (0.300" 7.62mm)	2	20 V	10 VDC	Non-Inverting	-40 °C	150 °C	Half-Bridge	8-PDIP
INFINEON IR2106SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	150 ns	50 ns	Independent	Surface Mount	0.8 V 2.9 V	600 V	8-SOIC	2	20 V	10 VDC	Non-Inverting	-40 °C	150 °C	Half-Bridge	8-SOIC	0.154 in	3.9 mm
INFINEON IR2106S	IGBT MOSFET (N-Channel) N-Channel MOSFET	150 ns	50 ns	Independent	Surface Mount	0.8 V 2.9 V	600 V	8-SOIC	2	20 V	10 VDC	Non-Inverting	-40 °C	150 °C	Half-Bridge	8-SOIC	0.154 in	3.9 mm
INFINEON IR2106STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	150 ns	50 ns	Independent	Surface Mount	0.8 V 2.9 V	600 V	8-SOIC	2	20 V	10 VDC	Non-Inverting	-40 °C	150 °C	Half-Bridge	8-SOIC	0.154 in	3.9 mm
INFINEON IR2106STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	150 ns	50 ns	Independent	Surface Mount	0.8 V 2.9 V	600 V	8-SOIC	2	20 V	10 VDC	Non-Inverting	-40 °C	150 °C	Half-Bridge	8-SOIC	0.154 in	3.9 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 1.11
Digikey	N/A	2322	$ 2.33
	Tube	1	$ 2.50
		10	$ 1.64
		25	$ 1.41
		100	$ 1.16
		250	$ 1.09
Newark	Each	1	$ 1.85
		10	$ 1.36
		100	$ 1.24
		500	$ 1.18
		1000	$ 1.14
		2500	$ 1.13
		7600	$ 1.13

Description

General part information

IR2106 Series

EiceDRIVER™ 600 Vhigh and low-sidegate driver ICwith typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package forIGBTsandMOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP. For the newest version with ourSOI technologywe recommend2ED2106S06F, providing integrated bootstrap diode, better robustness and higher switching frequency

Documents

Technical documentation and resources