Technical Specifications
Parameters and characteristics for this part
| Specification | IR2106STRPBF |
|---|---|
| Channel Type | Independent |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET, IGBT, MOSFET (N-Channel) |
| High Side Voltage - Max (Bootstrap) [Max] | 600 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH | 0.8 V, 2.9 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 0.154 in |
| Package / Case | 8-SOIC |
| Package / Case | 3.9 mm |
| Rise / Fall Time (Typ) [custom] | 150 ns |
| Rise / Fall Time (Typ) [custom] | 50 ns |
| Supplier Device Package | 8-SOIC |
| Voltage - Supply [Max] | 20 V |
| Voltage - Supply [Min] | 10 VDC |
| Part | Gate Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Channel Type | Mounting Type | Logic Voltage - VIL, VIH | High Side Voltage - Max (Bootstrap) [Max] | Package / Case | Number of Drivers | Voltage - Supply [Max] | Voltage - Supply [Min] | Input Type | Operating Temperature [Min] | Operating Temperature [Max] | Driven Configuration | Supplier Device Package | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 150 ns | 50 ns | Independent | Through Hole | 0.8 V 2.9 V | 600 V | 8-DIP (0.300" 7.62mm) | 2 | 20 V | 10 VDC | Non-Inverting | -40 °C | 150 °C | Half-Bridge | 8-PDIP | ||
 INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 150 ns | 50 ns | Independent | Surface Mount | 0.8 V 2.9 V | 600 V | 8-SOIC | 2 | 20 V | 10 VDC | Non-Inverting | -40 °C | 150 °C | Half-Bridge | 8-SOIC | 0.154 in | 3.9 mm |
 INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 150 ns | 50 ns | Independent | Surface Mount | 0.8 V 2.9 V | 600 V | 8-SOIC | 2 | 20 V | 10 VDC | Non-Inverting | -40 °C | 150 °C | Half-Bridge | 8-SOIC | 0.154 in | 3.9 mm |
 INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 150 ns | 50 ns | Independent | Surface Mount | 0.8 V 2.9 V | 600 V | 8-SOIC | 2 | 20 V | 10 VDC | Non-Inverting | -40 °C | 150 °C | Half-Bridge | 8-SOIC | 0.154 in | 3.9 mm |
 INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 150 ns | 50 ns | Independent | Surface Mount | 0.8 V 2.9 V | 600 V | 8-SOIC | 2 | 20 V | 10 VDC | Non-Inverting | -40 °C | 150 °C | Half-Bridge | 8-SOIC | 0.154 in | 3.9 mm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.61 | |
| 10 | $ 1.44 | |||
| 25 | $ 1.36 | |||
| 100 | $ 1.12 | |||
| 250 | $ 1.05 | |||
| 500 | $ 0.93 | |||
| 1000 | $ 0.73 | |||
| Digi-Reel® | 1 | $ 1.61 | ||
| 10 | $ 1.44 | |||
| 25 | $ 1.36 | |||
| 100 | $ 1.12 | |||
| 250 | $ 1.05 | |||
| 500 | $ 0.93 | |||
| 1000 | $ 0.73 | |||
| N/A | 4397 | $ 1.38 | ||
| Tape & Reel (TR) | 2500 | $ 0.60 | ||
| Mouser | N/A | 1 | $ 1.15 | |
| 10 | $ 0.89 | |||
| 25 | $ 0.82 | |||
| 100 | $ 0.76 | |||
| 250 | $ 0.73 | |||
| 500 | $ 0.71 | |||
| 1000 | $ 0.69 | |||
| 2500 | $ 0.60 | |||
Description
General part information
IR2106 Series
IR2106STRPBF is a high voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
Documents
Technical documentation and resources