IR2106 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HALF-BRIDGE 8DIP

Part	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Channel Type	Mounting Type	Logic Voltage - VIL, VIH	High Side Voltage - Max (Bootstrap) [Max]	Package / Case	Number of Drivers	Voltage - Supply [Max]	Voltage - Supply [Min]	Input Type	Operating Temperature [Min]	Operating Temperature [Max]	Driven Configuration	Supplier Device Package	Package / Case	Package / Case
INFINEON IR2106	IGBT MOSFET (N-Channel) N-Channel MOSFET	150 ns	50 ns	Independent	Through Hole	0.8 V 2.9 V	600 V	8-DIP (0.300" 7.62mm)	2	20 V	10 VDC	Non-Inverting	-40 °C	150 °C	Half-Bridge	8-PDIP
INFINEON IR2106SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	150 ns	50 ns	Independent	Surface Mount	0.8 V 2.9 V	600 V	8-SOIC	2	20 V	10 VDC	Non-Inverting	-40 °C	150 °C	Half-Bridge	8-SOIC	0.154 in	3.9 mm
INFINEON IR2106S	IGBT MOSFET (N-Channel) N-Channel MOSFET	150 ns	50 ns	Independent	Surface Mount	0.8 V 2.9 V	600 V	8-SOIC	2	20 V	10 VDC	Non-Inverting	-40 °C	150 °C	Half-Bridge	8-SOIC	0.154 in	3.9 mm
INFINEON IR2106STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	150 ns	50 ns	Independent	Surface Mount	0.8 V 2.9 V	600 V	8-SOIC	2	20 V	10 VDC	Non-Inverting	-40 °C	150 °C	Half-Bridge	8-SOIC	0.154 in	3.9 mm
INFINEON IR2106STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	150 ns	50 ns	Independent	Surface Mount	0.8 V 2.9 V	600 V	8-SOIC	2	20 V	10 VDC	Non-Inverting	-40 °C	150 °C	Half-Bridge	8-SOIC	0.154 in	3.9 mm