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TO-252AA
Discrete Semiconductor Products

FDD5N50TM-WS

Obsolete
ON Semiconductor

POWER MOSFET, N-CHANNEL, UNIFET<SUP>TM</SUP>, 500 V, 4 A, 1.4 Ω, DPAK

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TO-252AA
Discrete Semiconductor Products

FDD5N50TM-WS

Obsolete
ON Semiconductor

POWER MOSFET, N-CHANNEL, UNIFET<SUP>TM</SUP>, 500 V, 4 A, 1.4 Ω, DPAK

Technical Specifications

Parameters and characteristics for this part

SpecificationFDD5N50TM-WS
Current - Continuous Drain (Id) @ 25°C4 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)40 W
Rds On (Max) @ Id, Vgs1.4 Ohm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

FDD5N50NZ Series

UniFETTMII MOSFET is a high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.